Non-volatile memory cell with programmable unipolar switching element
US7974117B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2009 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Jul 26, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.