Bonding apparatus and wire bonding method
US7975901B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 7, 2010 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jun 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01082
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding apparatus including a chamber for maintaining an inert gas atmosphere; a first plasma torch for performing a surface treatment on pads and electrodes, the first plasma torch being attached in the chamber, to apply gas plasma to a substrate and a semiconductor chip that is placed inside the chamber; a second plasma torch for performing a surface treatment on an initial ball and/or wire at a tip end of a capillary that is positioned inside the chamber, the second plasma torch being attached in the chamber, to apply gas plasma to the initial ball and/or wire; and a bonding unit for bonding the surface-treated initial ball and/or wire to the surface-treated pads and electrodes in the chamber, thereby cleaning of the surface of the electrodes and pads as well as the wire can be effectively performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.