Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US7976630B2 · kind B2 · utility
89Cited by
3References
20Claims
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Key dates
| Filing date | Sep 9, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Sep 9, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.