Patent assignee · US · COMPANY

SORAA, INC.

204Patents
204Active
204Granted
63Portfolio score

Filing activity: Jun 5, 2008 → Dec 11, 2018 · 59 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US8247887B1 Method and surface morphology of non-polar gallium nitride containing substrates Electricity 268 Active
US8314429B1 Multi color active regions for white light emitting diode Electricity 268 Active
US8351478B2 Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates Electricity 235 Active
US8355418B2 Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates Electricity 233 Active
US8259769B1 Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates Electricity 232 Active
US8143148B1 Self-aligned multi-dielectric-layer lift off process for laser diode stripes Emerging Cross-Sectional Technologies 229 Active
US8252662B1 Method and structure for manufacture of light emitting diode devices using bulk GaN Electricity 215 Active
US8422525B1 Optical device structure using miscut GaN substrates for laser applications Electricity 209 Active
US8427590B2 Laser based display method and system Electricity 193 Active
US8124996B2 White light devices using non-polar or semipolar gallium containing materials and phosphors Electricity 189 Active
US8126024B1 Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater Electricity 187 Active
US8242522B1 Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm Electricity 187 Active
US8254425B1 Optical device structure using GaN substrates and growth structures for laser applications Electricity 187 Active
US8284810B1 Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods Electricity 185 Active
US8294179B1 Optical device structure using GaN substrates and growth structures for laser applications Electricity 182 Active
US8451876B1 Method and system for providing bidirectional light sources with broad spectrum Electricity 138 Active
US8416825B1 Optical device structure using GaN substrates and growth structure for laser applications Electricity 134 Active
US8148801B2 Nitride crystal with removable surface layer and methods of manufacture Electricity 116 Active
US8509275B1 Gallium nitride based laser dazzling device and method Electricity 96 Active
US7976630B2 Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture Emerging Cross-Sectional Technologies 89 Active
US9410664B2 Circadian friendly LED light source Emerging Cross-Sectional Technologies 73 Active
US8097081B2 High pressure apparatus and method for nitride crystal growth Emerging Cross-Sectional Technologies 65 Active
US8329511B2 Nitride crystal with removable surface layer and methods of manufacture Electricity 64 Active
US8048225B2 Large-area bulk gallium nitride wafer and method of manufacture Chemistry; Metallurgy 64 Active
US8303710B2 High pressure apparatus and method for nitride crystal growth Emerging Cross-Sectional Technologies 63 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.