Trench-gate MOSFET with capacitively depleted drift region
US7977193B1 · kind B1 · utility
8Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2010 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Oct 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A trench-gate metal oxide semiconductor field-effect transistor includes a field plate that extends into a drift region of the transistor. The field plate is configured to deplete the drift region when the transistor is in the OFF-state. The field plate is formed in a field plate trench. The field plate trench may be formed using a self-aligned etch process. The conductive material of the field plate and gate of the transistor may be deposited in the same deposition process step. The conductive material may be etched thereafter to form the field plate and the gate in the same etch process step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.