Inventor · San Jose, CA, US

Tiesheng Li

59Patents
10h-index
40Co-inventors
78Inventor score

Filing activity: Sep 27, 2004 → Mar 13, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US10270191B1 Plug and connector assembly Electricity 44 Active
US7285822B2 Power MOS device Electricity 32 Expired
US7605425B2 Power MOS device Electricity 22 Active
US7767526B1 High density trench MOSFET with single mask pre-defined gate and contact trenches Electricity 16 Active
US7879676B2 High density trench mosfet with single mask pre-defined gate and contact trenches Electricity 15 Active
US10833437B2 High-speed connector on high-density mini version chip side Electricity 15 Active
US7923774B2 Power MOS device with conductive contact layer Electricity 14 Active
US7667264B2 Shallow source MOSFET Electricity 11 Expired
US8546879B2 High density lateral DMOS with recessed source contact Electricity 10 Active
US7800169B2 Power MOS device Electricity 10 Active
US7875541B2 Shallow source MOSFET Electricity 10 Active
US8597998B2 Power MOS device fabrication Electricity 9 Active
US9281393B2 Super junction semiconductor device and associated fabrication method Electricity 8 Active
US7977193B1 Trench-gate MOSFET with capacitively depleted drift region Electricity 8 Active
US8288229B2 Power MOS device fabrication Electricity 7 Active
US8163618B2 Power MOSFET device structure for high frequency applications Electricity 7 Active
US8723178B2 Integrated field effect transistors with high voltage drain sensing Electricity 7 Active
US10205256B2 Plug and electrical connector component Electricity 6 Active
US7659570B2 Power MOSFET device structure for high frequency applications Electricity 6 Expired
US8963233B2 Power MOSFET device structure for high frequency applications Electricity 5 Active
US7795108B2 Resistance-based etch depth determination for SGT technology Electricity 4 Active
US7521332B2 Resistance-based etch depth determination for SGT technology Electricity 4 Active
US7932148B2 Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT) Electricity 4 Active
US7683369B2 Structure for measuring body pinch resistance of high density trench MOSFET array Electricity 3 Active
US7492005B2 Excessive round-hole shielded gate trench (SGT) MOSFET devices and manufacturing processes Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.