Method for fabricating a transistor with reliable source doping

US7977197B2 · kind B2 · utility

Assignee

• austriamicrosystems AG

Inventors

• Martin Knaipp · Kufstein, AT
• Georg Röhrer · Graz, AT

Key dates

• Filing date: Oct 6, 2006
• Grant date: Jul 12, 2011
• Expiry date: May 24, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0181

Abstract

A transistor and a method for the fabrication of transistors with different gate oxide thicknesses is proposed, in which for the doping of the source, the typical LDD implantation, which is formed after the fabrication of the gate electrode, is replaced by a doping step, which is generated before applying the gate stack. In this way that is already a component of the remaining process sequence in the fabrication of the transistor doping can be used.