Methods for the formation of interconnects separated by air gaps
US7977228B2 · kind B2 · utility
4Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2006 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Aug 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The microelectronic device interconnects are fabricated by a process that utilizes a silicon-based interlayer dielectric material layer, such as carbon-doped oxide, and a chemical mixture selective to materials used in the formation of the interconnects, including, but not limited to, copper, cobalt, tantalum, and/or tantalum nitride, to remove the interlayer dielectric material layer between adjacent interconnects thereby forming air gaps therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.