Patent · US Active

Method and system for depositing a thin-film transistor

US7977255B1 · kind B1 · utility

53Cited by

6References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Evelyn Scheer · Riedstadt, DE
Oliver Graw · Alzenau, DE
Roland Weber · Munich, DE
Udo Schreiber · Bad Orb, DE

Key dates

Filing date	Sep 16, 2010
Grant date	Jul 12, 2011
Priority date	—
Expiry date	Sep 16, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0321
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a thin-film transistor gate insulating layer over a substrate disposed in a processing chamber is provided. The method includes: introducing a processing gas for producing a plasma in the processing chamber; heating the substrate to a substrate processing temperature of between 50 and 350° C.; and depositing silicon oxide, silicon oxynitride, or silicon nitride over the heated substrate by sputtering a target assembly at a medium frequency.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.