Methods of manufacturing semiconductor devices
US7977257B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jul 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
In a semiconductor device and a method of manufacturing a semiconductor device, a lower electrode is formed on a semiconductor substrate. A first zirconium oxide layer is formed on the lower electrode by performing a first deposition process using a first zirconium source and a first oxidizing gas. A zirconium carbo-oxynitride layer is formed on the first zirconium oxide layer by performing a second deposition process using a second zirconium source, a second oxidizing gas and a nitriding gas, and an upper electrode is formed on the zirconium carbo-oxynitride layer. A zirconium oxide-based composite layer having a high dielectric constant and a thin equivalent oxide thickness can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.