Cleaning composition and process for producing semiconductor device
US7977292B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2008 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jul 11, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20% by mass of hydrogen peroxide, from 0.0001 to 0.003% by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.5% by mass of potassium hydroxide and water and having a pH of from 7.5 to 8.5, is provided. Also, a method for manufacturing a semiconductor device using the subject cleaning composition is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.