System and method for reducing particles and contamination by matching beam complementary aperture shapes to beam shapes
US7977628B2 · kind B2 · utility
1Cited by
13References
4Claims
0Family size
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Key dates
| Filing date | Jun 25, 2008 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jul 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24578
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system comprising an ion source configured to generate an ion beam along a beam path, a mass analyzer is located downstream of the ion source wherein the mass analyzer is configured to perform mass analysis of the ion beam and a beam complementary aperture located downstream of the mass analyzer and along the beam path, the beam complementary aperture having a size and shape corresponding to a cross-sectional beam envelope of the ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.