Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
US7977667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jul 17, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods of forming planar carbon nanotube (“CNT”) resistivity-switching materials for use in memory cells are provided, that include depositing first dielectric material, patterning the first dielectric material, etching the first dielectric material to form a feature within the first dielectric material, depositing CNT resistivity-switching material over the first dielectric material to fill the feature at least partially with the CNT resistivity-switching material, depositing second dielectric material over the CNT resistivity-switching material, and planarizing the second dielectric material and the CNT resistivity-switching material so as to expose at least a portion of the CNT resistivity-switching material within the feature. Other aspects are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.