Semiconductor device with increased channel area
US7977749B2 · kind B2 · utility
0Cited by
5References
3Claims
0Family size
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Key dates
| Filing date | Dec 28, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Dec 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.