Nitride based semiconductor laser device with oxynitride protective films on facets
US7978744B2 · kind B2 · utility
0Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2008 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | May 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0282
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.