High-density field emission elements and a method for forming said emission elements
US7981305B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2009 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Feb 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/3044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming high density emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to form regions of silicon dioxide, while the silicon etchant etches the silicon to form the emission elements. The silicon dioxide regions mask the underlying silicon during the silicon etch process. High density and high aspect ratio emission elements are formed without using photolithographic processes. The emission elements formed according to the present invention provide a more uniform emission of electrons. Further, a display incorporating emission elements formed according to the present invention provides increased brightness. The reliability of the display is increased due to the use of a plurality of emission elements to supply electrons for stimulating the phosphor substrate material to produce the image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.