Transient enhanced atomic layer deposition
US7981473B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2004 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Sep 19, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45527
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.