Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
US7981697B2 · kind B2 · utility
12Cited by
1References
37Claims
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Inventor
Key dates
| Filing date | Jun 1, 2010 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Jun 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
One embodiment of the present invention includes a memory element having a composite free layer including a first free sub-layer formed on top of the bottom electrode, a nano-current-channel (NCC) layer formed on top of the first free sub-layer, and a second free sub-layer formed on top of the NCC layer, wherein when switching current is applied to the memory element, in a direction that is substantially perpendicular to the layers of the memory element, local magnetic moments of the NCC layer switch the state of the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.