N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
US7981719B2 · kind B2 · utility
1Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | May 29, 2009 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Aug 7, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.