Semiconductor device and method of fabricating the same
US7981790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2010 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Jan 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.