Patent · US Active

Method of forming a metal directly on a conductive barrier layer by electrochemical deposition using an oxygen-depleted ambient

US7981793B2 · kind B2 · utility

0Cited by

4References

22Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Axel Preusse · Radebeul, DE
Charlotte Emnet · Bad Dürkheim, DE
Susanne Wehner · Villmar, DE

Key dates

Filing date	Mar 11, 2008
Grant date	Jul 19, 2011
Priority date	—
Expiry date	Aug 10, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76877
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.