Method for forming trench and method for fabricating semiconductor device using the same
US7981806B2 · kind B2 · utility
224Cited by
3References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2007 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Mar 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a trench includes providing a substrate, and forming the trench in the substrate using a gas containing chlorine (Cl2) gas as a main etch gas and SiFX gas as an additive gas, wherein a sidewall of the trench has a substantially vertical profile by virtue of reaction of the Cl2 gas and the SiFX gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.