Method for modifying a material layer using gas cluster ion beam processing
US7982196B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2009 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Nov 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31732
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.