Power switching transistors

US7982239B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN CORPORATION · US

Inventors

• Ty R. McNutt · Columbia, US
• Eric J. Stewart · Silver Spring, US
• Rowland C. Clarke · Saltsburg, US
• Ranbir Singh · Cary, US
• Stephen Van Campen · Clarksville, US
• Marc E. Sherwin · Catonsville, US

Key dates

• Filing date: Jun 13, 2007
• Grant date: Jul 19, 2011
• Expiry date: Dec 30, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/86

Abstract

In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source, and a second VJFET transistor having a source, and a gate disposed on each side of the second VJFET source. At least one gate of the first VJFET is separated from at least one gate of the second VJFET by a channel. The integrated semiconductor device also includes a Junction Barrier Schottky (JBS) diode positioned between the first and second VJFETs. The JBS diode comprises a metal contact that forms a rectifying contact to the channel and a non-rectifying contact to at least one gate of the first and second VJFETs, and the metal contact is an anode of the JBS diode. A first electrical connection ties the gates of the first VJFET, the gates of the second VJFET, and the anode of the JBS diode to a common gate electrode and a second electrical connection ties the source of the first VJFET and the source of the second VJFET to a common source electrode.