Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof
US7982266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2007 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Nov 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/657
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectrically isolated semiconductor device of high reliability is provided by realizing a fine and deep element isolating region which can prevent dislocation of an oxide film as an insulation layer by oxidation-induced stress. The dielectrically isolated semiconductor device includes an SOI substrate supporting an active element layer deeper than an expanded distance of a depletion layer subjected to the highest voltage applied to the device, and an element isolating region which encloses the active element layer. The element isolating region contains a deep trench which comes into contact with the insulation layer, and which is filled with n heavily doped layers on both side walls, second insulation films each adjacent to the n heavily doped layer and a polycrystalline semiconductor layer formed between the second insulation films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.