Norio Ishitsuka
36Patents
7h-index
66Co-inventors
72Inventor score
Filing activity: Jul 24, 1991 → Jan 21, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6090684A | Method for manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 156 | Expired |
| US5229643A | Semiconductor apparatus and semiconductor package | Electricity | 31 | Expired |
| US6559027B2 | Semiconductor device and process for producing the sme | Electricity | 15 | Expired |
| US6242323A | Semiconductor device and process for producing the same | Electricity | 15 | Expired |
| US8035169B2 | Semiconductor device with suppressed crystal defects in active areas | Electricity | 14 | Active |
| US6284625A | Method of forming a shallow groove isolation structure | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6635945B1 | Semiconductor device having element isolation structure | Electricity | 8 | Expired |
| US6881646B2 | Semiconductor device and process for producing the same | Electricity | 7 | Expired |
| US6348396B1 | Semiconductor device and production thereof | Electricity | 7 | Expired |
| US6562695B1 | Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processing | Electricity | 6 | Expired |
| US7244643B2 | Semiconductor device and manufacturing method thereof | Electricity | 5 | Expired |
| US7084477B2 | Semiconductor device and manufacturing method of the same | Electricity | 5 | Expired |
| US6544839B1 | Semiconductor integrated circuit device and a method of manufacturing the same | Electricity | 5 | Expired |
| US6403446B1 | Method for manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7674668B2 | Method of manufacturing a semiconductor device | Electricity | 2 | Active |
| US7141840B2 | Semiconductor device and production method therefor | Electricity | 2 | Expired |
| US7982266B2 | Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof | Electricity | 2 | Active |
| US6858515B2 | Process for producing semiconductor device and semiconductor device produced thereby | Electricity | 2 | Expired |
| US10386216B2 | Thermal type air flow sensor | Electricity | 2 | Active |
| US6326255A | Semiconductor device | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7279769B2 | Semiconductor device and manufacturing method thereof | Electricity | 2 | Expired |
| US6720234B2 | Semiconductor integrated circuit device and method of manufacturing involving the scale-down width of shallow groove isolation using round processing | Electricity | 2 | Expired |
| US9523595B2 | Method of manufacturing thermal flow meter | Physics | 2 | Active |
| US10775215B2 | Flow meter | Physics | 1 | Active |
| US7402473B2 | Semiconductor device and process for producing the same | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.