Semiconductor component including an isolation structure and a contact to the substrate

US7982284B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andreas Meiser · Unterhaching, DE
• Walter Hartner · Munich, DE
• Hermann Gruber · Leverkusen, DE
• Dietrich Bonart · Bad Abbach, DE
• Thomas R. Gross · Sinzing, DE

Key dates

• Filing date: Jun 28, 2006
• Grant date: Jul 19, 2011
• Expiry date: Mar 19, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench.