Patent · US Active

Semiconductor structure and method of making the same

US7982315B2 · kind B2 · utility

10Cited by

2References

11Claims

0Family size

Assignee

NANYA TECHNOLOGY CORPORATION · TW

Inventors

Yinan Chen · Taipei, TW
Hsien-Wen Liu
Tzu-Ching Tsai · Taipei, TW

Key dates

Filing date	Jun 30, 2008
Grant date	Jul 19, 2011
Priority date	—
Expiry date	Nov 29, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10B69/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device is provided. An amorphous silicon layer that acts as a UV blocking layer replaces a conventional silicon-rich oxide (SRO) layer or the super silicon-rich oxide (SSRO) layer. By doing this, the process window is increased. In addition, silicon nitride sidewall spacer is formed inside the contact hole to prevent charge loss.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.