System and method for matching silicon oxide thickness between similar process tools
US7983776B2 · kind B2 · utility
1Cited by
0References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 8, 2007 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Jan 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is one or more implementations is a method of fabricating a semiconductor for improved oxide thickness control, defining a process tool, determining and evaluating performance variables, determining a performance impact factor and thereafter modifying control of the process tool in the fabrication process to operate in direct relation to the determined results of the present invention. The present invention sets forth definitive advantages in reducing engineering time, improving process controls and improving cycle-times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.