Mask patterns including gel layers for semiconductor device fabrication
US7985529B2 · kind B2 · utility
0Cited by
7References
15Claims
0Family size
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Key dates
| Filing date | Jul 1, 2009 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Jul 26, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0392
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.