Method for forming microwires and/or nanowires
US7985632B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2007 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Mar 21, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is arranged an etching mask, and anneals, under hydrogenated atmosphere, the layer, the etching mask being maintained on the layer during the annealing. The depths and widths of the sections of the two trenches, and the width of a section of the portion of the layer, are such that the annealing eliminates a part of the portion of the layer, the two trenches then forming a single trench in which a remaining part of the portion of the layer forms the wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.