Inventor · Fontaine, FR

Erwan Dornel

24Patents
3h-index
22Co-inventors
59Inventor score

Filing activity: Dec 20, 2007 → Jul 3, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US9960205B2 Optoelectronic device comprising light-emitting diodes Electricity 5 Active
US9854632B2 Optoelectronic circuit with low-flicker light-emitting diodes Electricity 4 Active
US8236698B2 Method for forming non-aligned microcavities of different depths Performing Operations; Transporting 3 Active
US10923528B2 Optoelectronic device comprising pixels with improved contrast and brightness Electricity 2 Active
US8735959B2 Non-volatile memory device formed by dual floating gate deposit Electricity 2 Active
US10418506B2 Light-emitting device with integrated light sensor Electricity 2 Active
US7985632B2 Method for forming microwires and/or nanowires Emerging Cross-Sectional Technologies 2 Active
US11489088B2 Method for manufacturing an optoelectronic device with self-aligning light confinement walls Electricity 2 Active
US10153399B2 Optoelectronic device comprising semiconductor elements and its fabrication process Electricity 1 Active
US9876142B2 Optoelectronic device comprising light-emitting diodes Electricity 1 Active
US8988940B2 Structure and method for narrowing voltage threshold distribution in non-volatile memories Physics 1 Active
US8901654B1 Semiconductor-on-insulator (SOI) field effect transistor with buried epitaxial active regions Electricity 1 Active
US10411161B2 Light-emitting device having a built-in light sensor Electricity 1 Active
US10937777B2 Opto-electronic device with light-emitting diodes Electricity 1 Active
US8664059B2 Non-volatile memory device formed by dual floating gate deposit Electricity 1 Active
US11362137B2 Optoelectronic device comprising a matrix of three-dimensional diodes Electricity 0 Active
US8741704B2 Metal oxide semiconductor (MOS) device with locally thickened gate oxide Electricity 0 Active
US8252636B2 Method of manufacturing nanowires parallel to the supporting substrate Electricity 0 Active
US8928051B2 Metal oxide semiconductor (MOS) device with locally thickened gate oxide Electricity 0 Active
US11764196B2 Optoelectronic device comprising light-emitting diodes Electricity 0 Active
US11901482B2 Method for manufacturing an optoelectronic device with self-aligning light confinement walls Electricity 0 Active
US11769856B2 Method for manufacturing an optoelectronic device with self-aligning light confinement walls Electricity 0 Active
US9659781B2 Method for forming a floating gate in a recess of a shallow trench isolation (STI) region Electricity 0 Active
US11552126B2 Optoelectronic device with electronic components at the level of the rear face of the substrate and manufacturing method Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.