Semiconductor device with strained transistors and its manufacture
US7985641B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2009 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | May 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device has: a semiconductor substrate made of a first semiconductor material; an n-channel field effect transistor formed in the semiconductor substrate and having n-type source/drain regions made of a second semiconductor material different from the first semiconductor material; and a p-channel field effect transistor formed in the semiconductor substrate and having p-type source/drain regions made of a third semiconductor material different from the first semiconductor material, wherein the second and third semiconductor materials are different materials. The semiconductor device having n- and p-channel transistors has improved performance by utilizing stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.