Semiconductor device having a high aspect cylindrical capacitor and method for fabricating the same
US7985645B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Dec 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conductive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.