Method of making a semiconductor structure useful in making a split gate non-volatile memory cell

US7985649B1 · kind B1 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Brian A. Winstead · Austin, US
• Cheong Min Hong · Austin, US
• Sung-Taeg Kang · Austin, US
• Konstantin V. Loiko · Austin, US
• Spencer E. Williams · Austin, US

Key dates

• Filing date: Jan 7, 2010
• Grant date: Jul 26, 2011
• Expiry date: Feb 5, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A method of making a semiconductor device on a semiconductor layer is provided. The method includes: forming a select gate dielectric layer over the semiconductor layer; forming a select gate layer over the select gate dielectric layer; and forming a sidewall of the select gate layer by removing at least a portion of the select gate layer. The method further includes growing a sacrificial layer on at least a portion of the sidewall of the select gate layer and under at least a portion of the select gate layer and removing the sacrificial layer to expose a surface of the at least portion of the sidewall of the select gate layer and a surface of the semiconductor layer under the select gate layer. The method further includes forming a control gate dielectric layer, a charge storage layer, and a control gate layer.