Patent · US Active

Wafer level package and method of fabricating the same

US7985697B2 · kind B2 · utility

0Cited by
1References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 11, 2008
Grant dateJul 26, 2011
Priority date
Expiry dateJul 9, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/16235
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided are a wafer level package in which a communication line can be readily formed between an internal device and the outside of the package, and a method of fabricating the wafer level package. The wafer level package includes a first substrate having a cavity in which a first internal device is disposed, an Input/Output (I/O) pad formed on the first substrate and electrically connected with the first internal device, a second substrate disposed over the first substrate and from which a part corresponding to the I/O pad is removed, and a solder bonding the first and second substrates. According to the wafer level package and the method of fabricating the same, upper and lower substrates are sawed to different cutting widths, or a hole is formed in the upper substrate, such that a communication line of an internal device can be readily formed without a via process which penetrates a substrate. Therefore, in comparison with a conventional wafer level package fabricated using the via process, it is possible to simplify a fabrication process and reduce production cost.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.