Radio frequency amplifier with effective decoupling
US7986184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2009 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Dec 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A variety of circuits, methods and devices are implemented for radiofrequency amplifiers. According to one such implementation, a radiofrequency amplifier circuit is implemented in a SMD package. The circuit amplifies a radiofrequency signal having a base-band portion and a plurality of carrier signals frequency-spaced larger than the base-band bandwidth. The circuit includes a radiofrequency transistor connected to a circuit output having a parasitic output capacitance. The source-drain terminal is electrically connected to the circuit output. An internal shunt inductor provides compensation for the parasitic output capacitance. A high-density capacitor is connected between the internal shunt inductor and a circuit ground. The high-density capacitor has a terminal with a surface area can be at least ten times that of a corresponding planar surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.