Yann Lamy
10Patents
2h-index
20Co-inventors
50Inventor score
Filing activity: May 8, 2006 → Jan 28, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7986184B2 | Radio frequency amplifier with effective decoupling | Electricity | 6 | Active |
| US9536837B2 | TSV via provided with a stress release structure and its fabrication method | Electricity | 3 | Active |
| US9230923B2 | Electronic chip with means of protecting its back face | Electricity | 2 | Active |
| US9536845B2 | Device for radiofrequency (RF) transmission with an integrated electromagnetic wave reflector | Electricity | 2 | Active |
| US9728337B2 | Method for producing a capacitor | Electricity | 1 | Active |
| US9520366B2 | Chip comprising a phase change material based protecting device and a method of manufacturing the same | Electricity | 1 | Active |
| US7385469B2 | Integrated microelectronics component for filtering electromagnetic noise and radio frequency transmission circuit comprising same | Electricity | 0 | Active |
| US8455357B2 | Method of plating through wafer vias in a wafer for 3D packaging | Electricity | 0 | Active |
| US10586810B2 | SOI substrate compatible with the RFSOI and FDSOI technologies | Electricity | 0 | Active |
| US11171158B2 | SOI substrate compatible with the RFSOI and FDSOI technologies | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.