Semiconductor pressure sensor and fabrication method thereof
US7987727B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 2008 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Apr 19, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure sensor is provided that includes a diaphragm, a resistive element arranged at an upper portion of the diaphragm, an insulating film arranged on an upper face of the resistive element and an upper face of the diaphragm, a via that penetrates through a portion of the insulating film and comes into contact with the resistive element, and wiring that is electrically connected to the resistive element through the via. The insulating film includes a concave portion having a bottom face that is substantially flat. The wiring is arranged on the bottom face of the concave portion, and the depth of the concave portion is substantially equal to the thickness of the wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.