Patent · US Active

Photomask blank and photomask making method

US7989124B2 · kind B2 · utility

4Cited by
10References
19Claims
0Family size

Assignees

Inventors

Key dates

Filing dateJun 22, 2010
Grant dateAug 2, 2011
Priority date
Expiry dateJun 22, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/31616
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photomask blank comprises a transparent substrate, a light-shielding film deposited on the substrate and comprising a metal or metal compound susceptible to fluorine dry etching, and an etching mask film deposited on the light-shielding film and comprising another metal or metal compound resistant to fluorine dry etching. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.