Patent · US Active

Fabricating a gallium nitride device with a diamond layer

US7989261B2 · kind B2 · utility

1Cited by

7References

15Claims

0Family size

Assignee

Raytheon Company · US

Inventors

Ralph Korenstein · Framingham, US
Steven D. Bernstein · Watertown, US
Stephen J. Pereira · Hopedale, US

Key dates

Filing date	Dec 22, 2008
Grant date	Aug 2, 2011
Priority date	—
Expiry date	Sep 15, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.In another aspect, a device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.