Semiconductor devices having a support structure for an active layer pattern
US7989854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2005 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Dec 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices include a semiconductor substrate with a stack structure protruding from the semiconductor substrate and surrounded by an isolation structure. The stack structure includes an active layer pattern and a gap-filling insulation layer between the semiconductor substrate and the active layer pattern. A gate electrode extends from the isolation structure around the stack structure. The gate electrode is configured to provide a support structure for the active layer pattern. The gate electrode may be a gate electrode of a silicon on insulator (SOI) device formed on the semiconductor wafer and the semiconductor device may further include a bulk silicon device formed on the semiconductor substrate in a region of the semiconductor substrate not including the gap-filing insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.