Fin transistor
US7989856B2 · kind B2 · utility
13Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2008 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Aug 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/794
Abstract
A fin transistor includes: a substrate; a plurality of semiconductor fins formed on the substrate; a gate electrode covering a channel region of the semiconductor fins; and a member as a stress source for the semiconductor fins included in a region of the gate electrode and the region provided between the semiconductor fins, and the member being made of a different material from the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.