Non-volatile memory devices having improved operational characteristics
US7989869B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Dec 20, 2006 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Dec 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
Abstract
Nonvolatile memory devices are provided. Devices include active regions that may be defined by device isolation layers formed on a semiconductor substrate and extend in a first direction. Devices may also include word lines that may cross over the active regions and extend in a second direction intersecting the first direction. The active regions have a first pitch and the word lines have a second pitch that is greater than the first pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.