Semiconductor devices including a dielectric layer
US7989877B2 · kind B2 · utility
1Cited by
12References
10Claims
0Family size
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Key dates
| Filing date | Nov 23, 2009 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Jan 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
A semiconductor device includes a substrate and a doped hafnium oxide layer disposed on the substrate, the doped hafnium oxide layer including a hafnium oxide layer doped with doping atoms and having tetragonal unit lattices, an ion size of the doping atom being greater than an ion size of a hafnium atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.