Semiconductor structure including gate electrode having laterally variable work function
US7989900B2 · kind B2 · utility
103Cited by
11References
8Claims
0Family size
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Key dates
| Filing date | Aug 20, 2009 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Aug 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure, such as a CMOS structure, includes a gate electrode that has a laterally variable work function. The gate electrode that has the laterally variable work function may be formed using an angled ion implantation method or a sequential layering method. The gate electrode that has the laterally variable work function provides enhanced electrical performance within an undoped channel field effect transistor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.