Patent · US Active

Switching element, programmable logic integrated circuit and memory element

US7989924B2 · kind B2 · utility

7Cited by

2References

20Claims

0Family size

Assignee

NEC CORPORATION · JP

Inventors

Toshitsugu Sakamoto · Tokyo, JP
Noriyuki Iguchi · Tokyo, JP
Hiroshi Sunamura · Yokohama, JP

Key dates

Filing date	May 10, 2006
Grant date	Aug 2, 2011
Priority date	—
Expiry date	Mar 13, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10B63/30
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A switching element with a switching voltage set higher than conventional, which includes an ion conduction layer including tantalum oxide, a first electrode provided in contact with the ion conduction layer, and a second electrode provided in contact with the ion conduction layer and capable of supplying the ion conduction layer with metal ions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.