Method for forming a group III nitride material on a silicon substrate
US7989925B2 · kind B2 · utility
5Cited by
4References
11Claims
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Key dates
| Filing date | Jul 14, 2009 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Jul 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 μmol/cm2 of one or more organometallic compounds containing Al, in a flow of less than 5 μmol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.