Program method of flash memory device
US7990771B2 · kind B2 · utility
4Cited by
14References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2009 |
| Grant date | Aug 2, 2011 |
| Priority date | — |
| Expiry date | Apr 16, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of erasing and programming a flash memory device including multi-level cells (MLCs). MLCs of a word line are selected and some of the MLCs are pre-programmed based on whether their individual threshold voltages are included in a first voltage range. The selected MLCs are pre-programmed with a pre-program (first) voltage; and the remaining MLCs are prohibited from pre-programming; then the remaining MLCs connected to the selected word line are programmed by applying a program (second) voltage that gradually rises from the pre-program voltage at a ratio of a step voltage n for the selected line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.