Surface cleaning using sacrificial getter layer
US7993987B1 · kind B1 · utility
4Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2010 |
| Grant date | Aug 9, 2011 |
| Priority date | — |
| Expiry date | Oct 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a substrate including a non-insulative, silicon-including region for silicidation, the substrate including one or more contaminants at a top surface thereof. A getter layer is deposited over the non-insulative, silicon-including region, the getter layer reacting with at least one of the one or more contaminants in the non-insulative, silicon-including region at approximately room temperature. The getter layer is removed, and siliciding of the non-insulative, silicon-including region is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.